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Technische specificaties FQP13N10 Transistor
- Type: Mosfet
- Maximum Continuous Drain Current: 12.8 A
- Maximum Drain Source Resistance: 0.18 Ω
- Maximum Drain Source Voltage: 100 V
- Maximum Gate Source Voltage: ±25 V
- Maximum Operating Temperature: +175 °C
- Maximum Power Dissipation: 65 W
- Minimum Operating Temperature: -55 °C
- Pin Count: 3
- Dimensions: 10.1 x 4.7 x 9.4mm
Inhoud verpakking
- 1 x FQP13N10 Transistor
Bestel veilig en snel een FQP13N10 Transistor op Radioamateurwinkel.nl!
